Rchr
J-GLOBAL ID:200901025754857014
Update date: Aug. 27, 2020
Kohno Kenji
コウノ ケンジ | Kohno Kenji
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Research field (3):
Electronic devices and equipment
, Electric/electronic material engineering
, Semiconductors, optical and atomic physics
Research keywords (10):
太陽電池
, 薄膜
, 半導体
, 微結晶
, アモルファス
, solar cell
, thin film
, semiconductor
, microcrystal
, amorphous
Research theme for competitive and other funds (5):
2000 - 電気火災の原因調査研究
Si doped glassの製作とその物性研究
微結晶SiGeB合金薄膜の物性とそのdeviceへの応用
Preparation and Properties of Si Microcrystals Embedded in SiO
2
glass films.
Properties and apprications for devices of microcrystalline B-Si-Ge alloys.
MISC (19):
Y Osaka, K Kohno, H Mizuno, N Koshida. Physical properties of SiO2-doped Si films and electroluminescence in metal/SiO2-doped Si/p-Si diodes. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2002. 41. 12. 7481-7486
Y Osaka, K Kohno, H Mizuno, N Koshida. Physical properties of SiO2-doped Si films and electroluminescence in metal/SiO2-doped Si/p-Si diodes. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2002. 41. 12. 7481-7486
Physical Properties of Heavily B-doped Microcrystalline Si-Ge Alloys and Schottky Barrier of B-Si-Ge/P-Si. Jpn. J. Appl. Phys. 1998. 37. 10. 5708-2713
Formation of MIS structure(B/hexagonal BN/graphite)on graphite by plasma CVD. Technical Digest of the 8th symposium on Plasma Sciencs for Materials. 1995. 63
Photoluminescens of Si Microcrystals Embedded in SiO
2
Glass Films. 1994
more...
Education (2):
- 1967 Hiroshima University
- 1967 Hiroshima University
Professional career (1):
(BLANK)
Work history (1):
Hiroshima Kokusai Gakuin University Faculty of Engineering, Department of Integrated Engineering
Association Membership(s) (3):
日本航空宇宙学会
, 応用物理学会
, 電気学会
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