Rchr

J-GLOBAL ID：200901034293634254 Update date: May. 01, 2020

Tanaka Tomoyuki

タナカトモユキ | Tanaka Tomoyuki

Affiliation and department：
Homepage URL (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T63409779
MISC (8)：

J Nishio, M Hasegawa, K Kojima, T Ohno, Y Ishida, T Takahashi, T Suzuki, T Tanaka, K Arai. Uniformity of 4H-SiC epitaxial layers grown on 3-in diameter substrates. JOURNAL OF CRYSTAL GROWTH. 2003. 258. 1-2. 113-122
K Kojima, T Ohno, T Fujimoto, M Katsuno, N Ohtani, J Nishio, T Suzuki, T Tanaka, Y Ishida, T Takahashi, et al. Influence of stacking faults on the performance of 4H-SiC Schottky barrier diodes fabricated on (11(2)over-bar0) face. APPLIED PHYSICS LETTERS. 2002. 81. 16. 2974-2976
Epitaxial Growth of (11-20)4H-SiC Using Substrate Growth in the [11-20]Direction. MATERIALS SCIENCE FORUM. 2002. 389-393. 195-198
High-Rate Epitaxial Growth of 4H-SiC using a Vertical-Type,Quasi-Hot-Wall CVD Reactor. MATERIALS SCIENCE FORUM. 2002. 389-393. 179-182
Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Depositon. MATERIALS SCIENCE FORUM. 2002. 389-393. 215-218

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