Rchr
J-GLOBAL ID：200901083638947367
Update date: Jul. 18, 2022
Sawa Akihito
サワ アキヒト | Sawa Akihito
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Affiliation and department：
国立研究開発法人産業技術総合研究所 電子光基礎技術研究部門
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=A25475677
Research field (2)：
Electric/electronic material engineering
, Electrical power engineering
Research theme for competitive and other funds (1)：
強相関電子技術に関する研究
MISC (34)：
A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura. Interface resistance switching at a few nanometer thick perovskite manganite active layers. APPLIED PHYSICS LETTERS. 2006. 88. 23. 232112-1-232112-3
Y. Tokunaga, Y. Kaneko, J. P. He, T. Arima, A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura. Colossal electroresistance effect at metal electrode/La1-xSr1+xMnO4 interfaces. APPLIED PHYSICS LETTERS. 2006. 88. 22. 223507-
Y. Tokunaga, Y. Kaneko, J. P. He, T. Arima, A. Sawa, T. Fujii, M. Kawasaki, Y. Tokura. Colossal electroresistance effect at metal electrode/La1-xSr1+xMnO4 interfaces. APPLIED PHYSICS LETTERS. 2006. 88. 22. 223507-1-223507-3
遷移金属酸化物による抵抗変化型不揮発性メモリー(ReRAM). 応用物理. 2006
SAWA Akihito, FUJII Takeshi, KAWASAKI Masashi, TOKURA Yoshinori. Resistance Switching Memory of Perovskite-Oxide Heterojunctions. Technical report of IEICE. SDM. 2005. 105. 155. 23-26
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