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ArticleJ-GLOBAL ID:200902001881624719整理番号:92A0283775

A new three-dimensional MOSFET gate-induced drain leakage effect in narrow deep submicron devices.

狭チャネルディープ・サブミクロンデバイスにおいて,新しい三次元MOSFETのゲート誘起性ドレインリーク効果

著者:GEISSLER S(IBM General Technology Division, Vermont, USA)、PORTH B(IBM General Technology Division, Vermont, USA)、LASKY J(IBM General Technology Division, Vermont, USA)・・・
資料名:Tech Dig Int Electron Devices Meet 巻:1991 ページ:839-842
発行年:1991年
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