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ArticleJ-GLOBAL ID:200902001900654098整理番号:90A0805064

Interface-roughness-controlled exciton mobilities in GaAs/Al0.37Ga0.63As quantum wells.

GaAs/Al0.37Ga0.63As量子井戸における界面の粗さに支配された励起子の移動度

著者:HILLMER H(Univ. Stuttgart, Stuttgart, DEU)、FORCHEL A(Univ. Stuttgart, Stuttgart, DEU)、SAUER R(Univ. Ulm, Ulm, DEU)・・・
資料名:Physical Review. B. Condensed Matter and Materials Physics 巻:42 号:5 ページ:3220-3223
発行年:1990年08月15日
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