Interface-roughness-controlled exciton mobilities in GaAs/Al<sub>0.37</sub>Ga<sub>0.63</sub>As quantum wells.

HILLMER H; FORCHEL A; SAUER R; TU C W

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J-GLOBAL ID：200902001900654098 Reference number：90A0805064

Interface-roughness-controlled exciton mobilities in GaAs/Al_0.37Ga_0.63As quantum wells.

GaAs/Al_0.37Ga_0.63As量子井戸における界面の粗さに支配された励起子の移動度

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Volume： 42 Issue： 5 Page： 3220-3223 Publication year： Aug. 15, 1990
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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半導体-半導体接触【’81~’92】

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Interface-roughness-controlled exciton mobilities in GaAs/Al0.37Ga0.63As quantum wells.

Interface-roughness-controlled exciton mobilities in GaAs/Al_0.37Ga_0.63As quantum wells.