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ArticleJ-GLOBAL ID:200902001910510655整理番号:82A0108836

Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification.

種子固化による横方向エピタキシャルを用いてSiO2上に大面積単結晶Siシートを成長させる技術の改良

著者:TSAUR B‐Y(Massachusetts Inst. Technology)、FAN J C C(Massachusetts Inst. Technology)、GEIS M W(Massachusetts Inst. Technology)・・・
資料名:Appl Phys Lett 巻:39 号:7 ページ:561-563
発行年:1981年10月01日
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