Improved techniques for growth of large-area single-crystal Si sheets over SiO<sub>2</sub> using lateral epitaxy by seeded solidification.

TSAUR B-Y; FAN J C C; GEIS M W; SILVERSMITH D J; MOUNTAIN R W

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J-GLOBAL ID：200902001910510655 Reference number：82A0108836

Improved techniques for growth of large-area single-crystal Si sheets over SiO₂ using lateral epitaxy by seeded solidification.

種子固化による横方向エピタキシャルを用いてSiO₂上に大面積単結晶Siシートを成長させる技術の改良

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Author (5)： , , , ,
Material：
Volume： 39 Issue： 7 Page： 561-563 Publication year： Oct. 01, 1981
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Crystal growth of semiconductors , 金属-絶縁体-半導体構造【’81~’92】 , Transistors

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Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification.

Improved techniques for growth of large-area single-crystal Si sheets over SiO₂ using lateral epitaxy by seeded solidification.