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ArticleJ-GLOBAL ID:200902001928232288整理番号:92A0813380

Phosphine Doping Effects in the Plasma Deposition of Polycrystalline Silicon Films.

多結晶シリコン膜のプラズマ蒸着におけるホスフィンドーピング効果

著者:KAKINUMA H(Oki Electric Industry Co., Ltd., Tokyo)、MOHRI M(Oki Electric Industry Co., Ltd., Tokyo)、TSURUOKA T(Oki Electric Industry Co., Ltd., Tokyo)
資料名:Jpn J Appl Phys Part 2 巻:31 号:10A ページ:L1392-1395
発行年:1992年10月01日
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