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ArticleJ-GLOBAL ID:200902002018140203整理番号:92A0387375

Molecular-beam epitaxial growth and characterization of erbium-doped GaAs and AlGaAs.

エルビウムをドープしたGaAsとAlGaAsの分子線エピタキシー成長と特性評価

著者:EVANS K R(Wright Lab., Ohio)、TAYLOR E N(Wright Lab., Ohio)、STUTZ C E(Wright Lab., Ohio)・・・
資料名:Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures 巻:10 号:2 ページ:870-872
発行年:1992年03月
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