Art
J-GLOBAL ID：200902002037450485   Reference number：81A0164122

Localized state distribution in amorphous-silicon-based alloys using the field effect technique.

電界効果法によるアモルファスSi合金中の局在化状態密度
Author (1)：
MADAN A

About MADAN A

(Energy Conversion Devices Inc., Mich.)

About Energy Conversion Devices Inc., Mich.


Material：
Solar Cells  (Sol Cells)

About Solar Cells


Volume： 2  Issue： 3  Page： 277-288  Publication year： Nov. 1980 
JST Material Number： A0747B  ISSN： 0379-6787  Document type： Article
Article type： 原著論文  Country of issue： Switzerland (CHE)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
amorphous semiconductor

About amorphous semiconductor

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=81A0164122&from=J-GLOBAL&jstjournalNo=A0747B") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Electric conduction in amorphous and liquid semiconductors 
(BM03042G)

About Electric conduction in amorphous and liquid semiconductors

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
電界効果

About 電界効果

, 
アモルファス

About アモルファス

, 
Si合金

About Si合金

, 
局在化

About 局在化

, 
状態密度

About 状態密度


Return to Previous Page

TOP

BOTTOM