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ArticleJ-GLOBAL ID:200902002089979689整理番号:88A0556786

HT‐PCVD SiCx/Siのヘテロ接合特性

Properties of high temperature PCVD SiCX/Si hetero junction.

著者:桑垣衛(NTT LSI研)、荻野俊郎(NTT LSI研)、今井和雄(NTT LSI研)
資料名:電子情報通信学会全国大会講演論文集 巻:1988 号:Autumn Pt. C-2 ページ:C.2.62
発行年:1988年08月
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