Art
J-GLOBAL ID：200902015568625640
Reference number：91A0682343
Long-time transient conduction in a-Si:H p-i-n devices.
a-Si:Hp-i-n素子中での長時間過渡伝導
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=91A0682343©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=91A0682343&from=J-GLOBAL&jstjournalNo=H0004B") }}
Author (1)：
Material：
Volume：
63
Issue：
6
Page：
1343-1363
Publication year：
Jun. 1991
JST Material Number：
H0004B
ISSN：
1364-2812
CODEN：
PMABDJ
Document type：
Article
Article type：
原著論文
Country of issue：
United Kingdom (GBR)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (2)：
JST classification
Category name(code) classified by JST.
Electric conduction in amorphous and liquid semiconductors
, Diodes
Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
,
,
,
Return to Previous Page
