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ArticleJ-GLOBAL ID:200902015568625640整理番号:91A0682343

Long-time transient conduction in a-Si:H p-i-n devices.

a‐Si:Hp‐i‐n素子中での長時間過渡伝導

著者:STREET R A(Xerox Palo Alto Research Center, California, USA)
資料名:Philos Mag B 巻:63 号:6 ページ:1343-1363
発行年:1991年06月
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