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ArticleJ-GLOBAL ID:200902015569335549整理番号:92A0423138

二次電子を用いた被覆率制御によるMBE成長 (I) 相図作成とNiAl on GaAsへの応用

MBE Growth under Surface Stoichiometry Control Using Secondary Electron. (I). NiAl on GaAs.

著者:井上直久(NTT LSI研)、大坂次郎(NTT LSI研)、広野滋(NTT LSI研)・・・
資料名:応用物理学関係連合講演会講演予稿集 巻:39th 号:Pt 1 ページ:207
発行年:1992年03月
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