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ArticleJ-GLOBAL ID:200902015628716861整理番号:89A0009489

Direct Tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition.

RFプラズマ促進化学蒸着により二酸化けい素上に直接形成したタングステン

著者:WONG M(Stanford Univ., CA, USA)、SARASWAT K C(Stanford Univ., CA, USA)
資料名:IEEE Electron Device Lett 巻:9 号:11 ページ:582-584
発行年:1988年11月
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