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ArticleJ-GLOBAL ID:200902015654096057整理番号:94A0149507

Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD.

著者:KYUTT R N(A.F. Ioffe Physical‐Technical Inst., Russian Academy of Sciences, St. Petersburg, SUN)、NIKITINA I P(A.F. Ioffe Physical‐Technical Inst., Russian Academy of Sciences, St. Petersburg, SUN)、RUVIMOV S S(A.F. Ioffe Physical‐Technical Inst., Russian Academy of Sciences, St. Petersburg, SUN)・・・
資料名:Amorph Cryst Silicon Carbide 4 ページ:198-205
発行年:1992年
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About J-GLOBAL

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