Art

J-GLOBAL ID：200902015654096057   Reference number：94A0149507

Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD.

Author (4)： KYUTT R N (A.F. Ioffe Physical-Technical Inst., Russian Academy of Sciences, St. Petersburg, SUN) ,  NIKITINA I P (A.F. Ioffe Physical-Technical Inst., Russian Academy of Sciences, St. Petersburg, SUN) ,  RUVIMOV S S (A.F. Ioffe Physical-Technical Inst., Russian Academy of Sciences, St. Petersburg, SUN) ,  BAITHER D (Max-Planck Inst. Mikrostrukturphysik, Halle(Saale), DEU)
Material： Amorphous and Crystalline Silicon Carbide 4  (Amorph Cryst Silicon Carbide 4)
Page： 198-205  Publication year： 1992 
JST Material Number： K19940075  ISBN： 3-540-55687-7  Document type： Proceedings
Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Terms in the title (3)： SiC ,  Si ,  CVD