Art
J-GLOBAL ID：200902015725739760   Reference number：91A0727182

Rapid thermal annealing effect on near-surface stoichiometry of GaAs by heavy-ion Rutherford backscattering.

重イオンRutherford後方散乱によるGaAsの表面近傍の化学量論に対する急速熱アニーリングの影響
Author (4)：
GAGNON G

About GAGNON G

(Univ. Montreal, Quebec, CAN)

About Univ. Montreal, Quebec, CAN

, 
HOUDAYER A

About HOUDAYER A

(Univ. Montreal, Quebec, CAN)

About Univ. Montreal, Quebec, CAN

, 
CURRIE J F

About CURRIE J F

(Ecole Polytechnique de Montreal, Quebec, CAN)

About Ecole Polytechnique de Montreal, Quebec, CAN

, 
AZELMAD A

About AZELMAD A

(Mitel S.C.C., Quebec, CAN)

About Mitel S.C.C., Quebec, CAN


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 70  Issue： 2  Page： 1036-1038  Publication year： Jul. 15, 1991 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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Rutherford back scattering

About Rutherford back scattering

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Surface structure of semiconductors 
(BK15030A)

About Surface structure of semiconductors

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
重イオン

About 重イオン

, 
Rutherford後方散乱

About Rutherford後方散乱

, 
GaAs

About GaAs

, 
近傍

About 近傍

, 
化学量論

About 化学量論

, 
急速熱アニーリング

About 急速熱アニーリング


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