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ArticleJ-GLOBAL ID:200902015727402089整理番号:86A0206410

Bound excitons in Si-doped GaAs/Al0.22Ga0.78As single quantum wells.

SiをドープしたGaAs/Al0.22Ga0.78As単一量子井戸中の束縛励起子

著者:NOMURA Y(Optoelectronics Joint Research Lab., Kawasaki)、SHINOZAKI K(Optoelectronics Joint Research Lab., Kawasaki)、ISHII M(Optoelectronics Joint Research Lab., Kawasaki)
資料名:Journal of Applied Physics 巻:58 号:5 ページ:1864-1866
発行年:1985年09月01日
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