High Performance Cell Technology Featuring Sub-100nm DRAM with Multi-Gigabit Density.

LEE B-C; YOO J-R; LEE D-H; KIM C-S; JUNG I-S; CHOI S; CHUNG U-I; MOON J-T

Art

J-GLOBAL ID：200902131020977727 Reference number：03A0088505

High Performance Cell Technology Featuring Sub-100nm DRAM with Multi-Gigabit Density.

高性能セル技術多ギガビット密度を有するサブ-100nmDRAMのフィーチャリング

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Material：
Volume： 2002 Page： 835-838 Publication year： 2002
JST Material Number： C0829B ISSN： 0163-1918 Document type： Proceedings
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor integrated circuit , Manufacturing technology of solid-state devices

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