Art
J-GLOBAL ID：200902131021944997   Reference number：02A0054147

Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress.

外部圧縮応力による超薄ゲート酸化物を有する金属-酸化物-半導体構造における劣化
Author (2)：
HONG C-C

About HONG C-C

(National Taiwan Univ., Taipei, TWN)

About National Taiwan Univ., Taipei, TWN

, 
HWU J-G

About HWU J-G

(National Taiwan Univ., Taipei, TWN)

About National Taiwan Univ., Taipei, TWN


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 79  Issue： 23  Page： 3797-3799  Publication year： Dec. 03, 2001 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*MOS structure

About MOS structure

,...
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Thesaurus term/Semi thesaurus term
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interface state

About interface state


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JST classification (1)：
JST classification
Category name(code) classified by JST.
Metal-insulator-semiconductor structures 
(BM03085X)

About Metal-insulator-semiconductor structures

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
圧縮応力

About 圧縮応力

, 
ゲート酸化物

About ゲート酸化物

, 
酸化物

About 酸化物


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