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ArticleJ-GLOBAL ID:200902131037418314整理番号:97A0324162

Electrical properties and topography of SnO2 thin films prepared by reactive sputtering.

反応性スパッタリングにより作成したSnO2薄膜の電気的性質及びトポグラフィー

著者:BROUSSEAU J‐L(Univ. Miami, FL, USA)、BOURQUE H(Univ. Miami, FL, USA)、TESSIER A(Univ. Miami, FL, USA)・・・
資料名:Appl Surf Sci 巻:108 号:3 ページ:351-358
発行年:1997年03月
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