Electrical properties and topography of SnO<sub>2</sub> thin films prepared by reactive sputtering.

BROUSSEAU J-L; BOURQUE H; TESSIER A; LEBLANC R M

Art

J-GLOBAL ID：200902131037418314 Reference number：97A0324162

Electrical properties and topography of SnO₂ thin films prepared by reactive sputtering.

反応性スパッタリングにより作成したSnO₂薄膜の電気的性質及びトポグラフィー

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=97A0324162&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=97A0324162&from=J-GLOBAL&jstjournalNo=B0707B") }}

Author (4)： , , ,
Material：
Volume： 108 Issue： 3 Page： 351-358 Publication year： Mar. 1997
JST Material Number： B0707B ISSN： 0169-4332 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=97A0324162&from=J-GLOBAL&jstjournalNo=B0707B") }}

Oxide thin films , Electric conduction in crystalline semiconductors

, , ,

Return to Previous Page

Electrical properties and topography of SnO2 thin films prepared by reactive sputtering.

Electrical properties and topography of SnO₂ thin films prepared by reactive sputtering.