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ArticleJ-GLOBAL ID:200902165166108862整理番号:95A0790060

EBIC determination of lateral dopant diffusion and junction depth in planar devices.

プレーナ素子における横方向ドーパント拡散と接合深さのEBIC決定

著者:BOUDJANI A(Univ. Djillali Liabes, Sidi Bel Abbes, DZA)、SIEBER B(USTL, Villeneuve d’Ascq, FRA)、BOUDJANI L(Univ. Djillali Liabes, Sidi Bel Abbes, DZA)
資料名:Semicond Sci Technol 巻:10 号:8 ページ:1151-1155
発行年:1995年08月
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