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ArticleJ-GLOBAL ID:200902212388235283整理番号:06A0426397

Deep reactive ion etching of borosilicate glass using an anodically bonded silicon wafer as an etching mask

陽極接合シリコンウエハをエッチングマスクとして用いるほうけい酸ガラスの深反応性イオンエッチング

著者:AKASHI T(Hitachi, Ltd., Ibaraki, JPN)、YOSHIMURA Y(Hitachi, Ltd., Ibaraki, JPN)
資料名:J Micromech Microeng 巻:16 号:5 ページ:1051-1056
発行年:2006年05月
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About J-GLOBAL

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