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ArticleJ-GLOBAL ID:200902212399911272整理番号:08A0420285

InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition

金属有機物化学蒸着によるウェハ接合したサファイア基板上の多結晶性AlN上におけるInGaN/GaN多重量子井戸とLED成長

著者:PINNINGTON T.(Aonex Technologies Inc.,129 N. Hill Ave., Suite 108, Pasadena, CA 91106, USA)、KOLESKE D.d.(Sandia National Laboratories, Albuquerque, NM 87185, USA)、ZAHLER J.m.(Aonex Technologies Inc.,129 N. Hill Ave., Suite 108, Pasadena, CA 91106, USA)・・・
資料名:Journal of Crystal Growth 巻:310 号:10 ページ:2514-2519
発行年:2008年05月01日
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