Art
J-GLOBAL ID：200902212468728469   Reference number：07A0794567

The Effect of Electrostatic Discharge on Electrical Overstress Susceptibility in a Gallium Arsenide MESFET-Based Device

GaAs MESFETベースデバイスにおける電気的な過剰ストレス感受性への静電放電の影響
Author (3)：
EVELOY Valerie

About EVELOY Valerie

(Petroleum Inst., Abu Dhabi, ARE)

About Petroleum Inst., Abu Dhabi, ARE

, 
HWANG Yu-Chul

About HWANG Yu-Chul

(Univ. Maryland, MD, USA)

About Univ. Maryland, MD, USA

, 
PECHT Michael G.

About PECHT Michael G.

(Univ. Maryland, MD, USA)

About Univ. Maryland, MD, USA


Material：
IEEE Transactions on Device and Materials Reliability  (IEEE Trans Device Mater Reliab)

About IEEE Transactions on Device and Materials Reliability


Volume： 7  Issue： 1  Page： 200-208  Publication year： Mar. 2007 
JST Material Number： W1320A  ISSN： 1530-4388  CODEN： ITDMA2  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*MESFET

About MESFET

,...
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Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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ESD protection

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JST classification (3)：
JST classification
Category name(code) classified by JST.
Measurement,testing and reliability of solid-state devices 
(NC03040G)

About Measurement,testing and reliability of solid-state devices

,  Transistors 
(NC03070N)

About Transistors

,  Electrostatics,magnetostatics 
(BD01010C)

About Electrostatics,magnetostatics

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
GaAs

About GaAs

, 
MESFET

About MESFET

, 
ストレス感受性

About ストレス感受性

, 
静電放電

About 静電放電


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