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ArticleJ-GLOBAL ID:200902212512972259整理番号:03A0184183

Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors during Hot-Carrier Stress.

ホットキャリアストレス中,高電圧の横方向拡散した金属‐酸化物‐半導体電界効果トランジスタの時間依存ドレイン及びソース直列抵抗

著者:CHEN S‐H(National Tsing Hua Univ., Hisnchu, TWN)、GONG J(National Tsing Hua Univ., Hisnchu, TWN)、WU M‐C(National Tsing Hua Univ., Hisnchu, TWN)・・・
資料名:Jpn J Appl Phys Part 1 巻:42 号:2A ページ:409-413
発行年:2003年02月15日
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