Rchr
J-GLOBAL ID：200901092271755406
Update date: May. 18, 2020
Morishita Tetsuya
モリシタ テツヤ | Morishita Tetsuya
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
About National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T02858452
Research field (3)：
Crystal engineering
, Applied materials
, Mathematical physics and basic theory
Research keywords (1)：
分子動力学計算 シリコン 液体・ガラス 第一原理計算 ナノ物質
MISC (5)：
Tetsuya Morishita. How does tetrahedral structure grow in liquid silicon upon supercooling?. PHYSICAL REVIEW LETTERS. 2006. 97. 16. 165502-1-165502-4
Kengo Nishio, Tetsuya Morishita, Wataru Shinoda, Masuhiro Mikami. Molecular dynamics simulations of self-organized polyicosahedral Si nanowire. JOURNAL OF CHEMICAL PHYSICS. 2006. 125. 7. 074712-1-074712-4
K Nishio, T Morishita, W Shinoda, M Mikami. Molecular dynamics simulation of icosahedral Si quantum dot formation from liquid droplets. PHYSICAL REVIEW B. 2005. 72. 24. 245321-1-4
T Morishita. Anomalous diffusivity in supercooled liquid silicon under pressure. PHYSICAL REVIEW E. 2005. 72. 2. 021201-1-021201-4
T Morishita. High density amorphous form and polyamorphic transformations of silicon. PHYSICAL REVIEW LETTERS. 2004. 93. 5. 055503-1-055503-4
Association Membership(s) (3)：
日本高圧力学会
, 分子シミュレーション研究会
, 日本物理学会
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