Art

J-GLOBAL ID：201702285270990955   Reference number：17A0537002

Transport-kinetic model of polysilicon chemical vapor deposition in SiHCl_3-H_2 system

SIHCL_3-H_2系の多結晶シリコンの化学気相堆積の動力学モデルを確立した。【JST・京大機械翻訳】

Author (7)： Hou Yanqing (National Key Laboratory for Clean Application of Complex Non-ferrous Metal Resources, Kunming University of Science and Technology) ,  Nie Zhifeng (National Key Laboratory for Clean Application of Complex Non-ferrous Metal Resources, Kunming University of Science and Technology) ,  Xie Gang (Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology) ,  Ma Wenhui (National Key Laboratory for Clean Application of Complex Non-ferrous Metal Resources, Kunming University of Science and Technology) ,  Dai Yongnian (Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology) ,  Yu Xiaohua (Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology) ,  Song Dongming (Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology)
Material： Zhongnan Daxue Xuebao Zirankexueban
Volume： 47  Issue： 11  Page： 3627-3634  Publication year： 2016 
JST Material Number： C2798A  ISSN： 1672-7207  Document type： Article
Article type： 原著論文  Country of issue： China (CHN)  Language： CHINESE (ZH)

Abstract/Point： The transport-kinetic model (T...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=17A0537002&from=J-GLOBAL&jstjournalNo=C2798A") }}

Thesaurus term： silicon ,  boundary condition ,  *chemical vapor deposition ,  rate of sedimentation ,  reaction kinetics ,  *polysilicon ,  surface temperature ,  relative error ,  air flow speed ,  hydrogen concentration ,  moving velocity ,  surface chemical reaction ,  *dynamics model

Author keywords (5)： transport-kinetic model ,  polysilicon ,  chemical vapor deposition ,  silicon deposition rate ,  transport phenomena

JST classification (2)： Thin films of other inorganic compounds  (BK14060A) ,  Semiconductor thin films  (BK14040E)

Terms in the title (3)： 多結晶シリコン ,  化学気相堆積 ,  動力学モデル