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J-GLOBAL ID：201702270748356162   整理番号：17A0214148

EUVパターン形成と二重歪高移動度チャンネルを特徴とする7nm FinFET技術【Powered by NICT】

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

著者 (87件)： Xie R. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Montanini P. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Akarvardar K. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Tripathi N. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Haran B. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Johnson S. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Hook T. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Hamieh B. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Corliss D. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Wang J. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Miao X. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Sporre J. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Fronheiser J. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Loubet N. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Sung M. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Sieg S. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Mochizuki S. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Prindle C. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Seo S. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Greene A. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Shearer J. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Labonte A. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Fan S. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Liebmann L. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Chao R. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Arceo A. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Chung K. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Cheon K. (Samsung Electronics, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Adusumilli P. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Amanapu H.P. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Bi Z. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Cha J. (Samsung Electronics, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Chen H.-C. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Conti R. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Galatage R. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Gluschenkov O. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Kamineni V. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Kim K. (Samsung Electronics, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Lee C. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Lie F. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Liu Z. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Mehta S. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Miller E. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Niimi H. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Niu C. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Park C. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Park D. (Samsung Electronics, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Raymond M. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Sahu B. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Sankarapandian M. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Siddiqui S. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Southwick R. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Sun L. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Surisetty C. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Tsai S. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Whang S. (Samsung Electronics, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Xu P. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Xu Y. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Yeh C. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Zeitzoff P. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Zhang J. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Li J. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Demarest J. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Arnold J. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Canaperi D. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Dunn D. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Felix N. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Gupta D. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Jagannathan H. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Kanakasabapathy S. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Kleemeier W. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Labelle C. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Mottura M. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Oldiges P. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Skordas S. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Standaert T. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Yamashita T. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Colburn M. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Na M. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Paruchuri V. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Lian S. (Samsung Electronics, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Divakaruni R. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Gow T. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Lee S. (Samsung Electronics, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Knorr A. (GLOBALFOUNDRIES, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Bu H. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203) ,  Khare M. (IBM Research, Albany Nanotechnology Center, 257 Fuller Road, Albany, NY 12203)
資料名： IEEE Conference Proceedings  (IEEE Conference Proceedings)
巻： 2016  号： IEDM  ページ： 2.7.1-2.7.4  発行年： 2016年 
JST資料番号： W2441A  資料種別： 会議録 (C)
記事区分： 原著論文  発行国： アメリカ合衆国 (USA)  言語： 英語 (EN)

抄録/ポイント： FinFET技術で報告された44~48nmの最も強い接触ポリピッチ(CPP),36nmの配線ピッチと7nm技術を提示した。光リソグラフィー限界を克服するために,極端紫外リソグラフィー(EUV)を初めて多重臨界レベルに導入されている。二重歪チャネルも高性能応用のための移動度を向上させるために実施されている。Copyright 2017 The Institute of Electrical and Electronics Engineers, Inc. All Rights reserved. Translated from English into Japanese by JST【Powered by NICT】

シソーラス用語： 配線 ,  多重化 ,  *チャネル ,  フォトリソグラフィー ,  臨界 ,  極端紫外線 ,  *移動度 ,  リソグラフィー ,  *パターン形成
準シソーラス用語： *FinFET ,  *高移動度 , 【Automatic Indexing@JST】

分類 (2件)： 半導体集積回路  (NC03162T) ,  トランジスタ  (NC03070N)

タイトルに関連する用語 (6件)： EUV ,  パターン形成 ,  歪 ,  高移動度 ,  チャンネル ,  FinFET