文献

J-GLOBAL ID：201702271632797930   整理番号：17A0313246

相変化メモリのための誘導結合BCl_3/Arプラズマ中の相変化材料GeTeのエッチング特性【Powered by NICT】

Etching characteristics of phase change material GeTe in inductively coupled BCl₃/Ar plasma for phase change memory

著者 (30件)： Xia Yangyang (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Xia Yangyang (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Xia Yangyang (University of the Chinese Academy of Sciences, Beijing 100049, China) ,  Liu Bo (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Liu Bo (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Wang Qing (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Wang Qing (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Wang Qing (University of the Chinese Academy of Sciences, Beijing 100049, China) ,  Zhang Zhonghua (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Zhang Zhonghua (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Zhang Zhonghua (University of the Chinese Academy of Sciences, Beijing 100049, China) ,  Li Shasha (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Li Shasha (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Li Shasha (University of the Chinese Academy of Sciences, Beijing 100049, China) ,  Zheng Yonghui (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Zheng Yonghui (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Zheng Yonghui (University of the Chinese Academy of Sciences, Beijing 100049, China) ,  Li Le (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Li Le (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Li Le (University of the Chinese Academy of Sciences, Beijing 100049, China) ,  Song Sannian (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Song Sannian (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Yin Weijun (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Yin Weijun (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Yao Dongning (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Yao Dongning (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Song Zhitang (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Song Zhitang (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China) ,  Feng Songlin (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China) ,  Feng Songlin (Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)
資料名： Microelectronic Engineering  (Microelectronic Engineering)
巻： 161  ページ： 69-73  発行年： 2016年08月01日 
JST資料番号： C0406B  ISSN： 0167-9317  CODEN： MIENEF  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： オランダ (NLD)  言語： 英語 (EN)

抄録/ポイント： 相変化材料GeTeのドライエッチング特性を誘導結合BCl_3/Arプラズマ中で調べた。ガス比,ガス圧,基板バイアスパワー,誘導結合プラズマ(ICP)源電力を変化させることで,GeTe膜の種々の特性は,表面粗さ,エッチング速度及びプロファイルについて検討した。エッチング損傷はエッチされたブランクGeTe膜のX線光電子分光法の結果を解析することにより研究した。エッチ速度はBCl_3含有量と基板バイアス電力の増加と共に増加することを見出した。しかし,それは最初に増加し,ガス圧力,及びICP電力の増加と共に減少した。表面はガス圧の増加と共に平滑になるが,より高いパワーと基板バイアスパワーは粗い表面をもたらした。エッチングプロセス中の表面,Ar~+スパッタリングにより容易に除去できる残った小C汚染,酸化およびハロゲン化層。GeTeの化学量論比はエッチされた表面上で十~秒の中でスパッタした後に安定であり,エッチング損傷が低いを示した。Copyright 2017 Elsevier B.V., Amsterdam. All rights reserved. Translated from English into Japanese by JST.【Powered by NICT】

シソーラス用語： 誘導結合プラズマ ,  化学量論 ,  電力 ,  X線光電子分光法 ,  *電磁結合 ,  スパッタリング ,  *アルゴン ,  *エッチング
準シソーラス用語： エッチング速度 ,  基板バイアス ,  ガス圧 ,  *エッチング特性 ,  *GeTe ,  *相変化材料 ,  *相変化メモリ , 【Automatic Indexing@JST】

著者キーワード (5件)： GeTe ,  BCl_3/Ar ,  エッチング ,  ICP ,  相変化材料

分類 (1件)： 固体デバイス製造技術一般  (NC03030V)

タイトルに関連する用語 (7件)： 相変化メモリ ,  誘導結合 ,  Ar ,  プラズマ ,  相変化材料 ,  GeTe ,  エッチング特性