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J-GLOBAL ID：201702290842515692   整理番号：17A0058309

直接光触媒応用のための,Au箔上のMoS₂/WS₂およびWS₂/MoS₂垂直積層の温度媒介選択成長

Temperature-Mediated Selective Growth of MoS₂/WS₂ and WS₂/MoS₂ Vertical Stacks on Au Foils for Direct Photocatalytic Applications

著者 (18件)： Shi Jianping (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China) ,  Shi Jianping (Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Tong Rui (Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Faculty of Physics and Electronic Technology, Hubei University, Wuhan, 430062, P. R. China) ,  Zhou Xiebo (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China) ,  Zhou Xiebo (Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Gong Yue (Institute of Physics, Chinese Academy of Sciences and Beijing National Laboratory for Condensed Matter Physics, Beijing, 100190, P. R. China) ,  Zhang Zhepeng (Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Ji Qingqing (Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Zhang Yu (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China) ,  Zhang Yu (Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Fang Qiyi (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China) ,  Fang Qiyi (Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Gu Lin (Institute of Physics, Chinese Academy of Sciences and Beijing National Laboratory for Condensed Matter Physics, Beijing, 100190, P. R. China) ,  Gu Lin (Collaborative Innovation Center of Quantum Matter, Beijing, 100190, P. R. China) ,  Wang Xina (Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Faculty of Physics and Electronic Technology, Hubei University, Wuhan, 430062, P. R. China) ,  Liu Zhongfan (Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Zhang Yanfeng (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China) ,  Zhang Yanfeng (Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China)
資料名： Advanced Materials  (Advanced Materials)
巻： 28  号： 48  ページ： 10664-10672  発行年： 2016年12月28日 
JST資料番号： W0001A  ISSN： 0935-9648  CODEN： ADVMEW  資料種別： 逐次刊行物 (A)
記事区分： 短報  発行国： ドイツ (DEU)  言語： 英語 (EN)

抄録/ポイント： Au箔上のMoS₂/WS₂およびWS₂/MoS₂積層形成のために,成長温度媒介2段階化学気相堆積法を設計した。支配的なA-A積層MoS₂/WS₂およびA-B積層WS₂/MoS₂を選択的に達成し確認した。II型バンド配向により,電極から活性部位への方向性電子流が可能となるため,光照射下で,MoS₂/WS₂またはWS₂/MoS₂の光触媒活性に,相対的増大または低下が観測された。Copyright 2017 Wiley Publishing Japan K.K. All Rights reserved. Translated from English into Japanese by JST.

シソーラス用語： *光触媒 ,  *箔 ,  *硫化モリブデン ,  *タングステン化合物 ,  *多硫化物 ,  *積層構造 ,  *選択成長 ,  *温度依存性 ,  *化学蒸着 ,  電子顕微鏡観察 ,  光ルミネセンス ,  Raman分光分析 ,  光学顕微鏡法 ,  エネルギー準位 ,  顕微鏡観察 ,  走査型トンネル顕微鏡 ,  エネルギー分散X線分光分析 ,  電気化学インピーダンス ,  ボルタンメトリー ,  光照射 ,  活性部位 ,  触媒調製
準シソーラス用語： *金箔 ,  *二硫化モリブデン ,  *二硫化タングステン ,  走査電子顕微鏡観察 ,  原子間力顕微鏡観察 ,  リニアスイープボルタンメトリー ,  触媒活性部位

著者キーワード (5件)： electron-hole separation ,  MoS2 ,  photocatalysis ,  vertical heterostructures ,  WS2

分類 (4件)： 光化学一般  (CB08010U) ,  金属酸化物及び金属カルコゲン化物の結晶構造  (BK07020Y) ,  半導体の結晶成長  (BK13040X) ,  触媒の調製  (CB06110P)

タイトルに関連する用語 (7件)： 光触媒 ,  応用 ,  Au ,  箔 ,  MoS2 ,  垂直 ,  選択成長