Sato, R, Kutsukake, K, Harada, S, Tagawa, M, Ujihara. Machine Learning for Semiconductor Process Simulation Described by Coupled Partial Differential Equations. ADVANCED THEORY AND SIMULATIONS. 2023
Zhou, HQ, Zhou, Huiqin, Miura, H, Miura, Hitoshi, Dang, YF, Dang, Yifan, Fukami, Y, Fukami, Yuma, Takemoto, H, Takemoto, Hisaki, et al. Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions. CRYSTAL GROWTH & DESIGN. 2023. 23. 5. 3393-3401
Dang, Yifa, Liu, Xinbo,Zhu, Can, Fukami, Yuma,Ma, Shuyang , Zhou, Huiqin ,Liu, Xin, Kutsukake, Kentaro, et al. Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC. CRYSTAL GROWTH & DESIGN. 2023. 23. 2. 1023-1032
Shunya Sugimoto, Gareoung Kim, Tsunehiro Takeuchi, Miho Tagawa, Toru Ujihara, Shunta Harada. Thermal conduction in titanium-chromium oxide natural superlattices with an ordered arrangement of nearly pristine interfaces. Journal of Alloys and Compounds. 2023. 934
Large Diameter SiC Crystal Growth assisted by AI technology
(33th 2022 International Symposium on Micro-Nano Mechatronics and Human Science (MHS2022) 2023)
2019 - 応用物理学会講 第41回応用物理学会論文賞「応用物理学会論文奨励賞」 Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping
2018/07/27 - ICOMF17 17th International Conference on Organized Molecular Films(ICOMF17) DNA-controlled assembly of 2D nanoparticle lattices on lipid bilayer
2017/10/20 - 名古屋大学 博士課程教育リーディングプログラム フォーラム2017 " Students Award " SiC 溶液成長における機械学習を用いた溶液温度・流速分布のリアルタイム可視化
2017/09/22 - ICSCRM2017 ICSCRM2017 Student Poster Award irect Observation of Stacking Faults Expansion in 4H-SiC at High Temperatures by In Situ X-Ray Topography
2016/08/11 - 18th International Conference on Crystal Growth and Epitaxy photo contest award the 18th International Conference on Crystal Growth and Epitaxy Morphology of AlN whiskers grown by reacting N2 gas and Al vapor
2015/10/08 - ICSCRM2015 ICSCRM2015 Student Poster Award Distribution of nitrogen doping concentration in 4H-SiC grown by solution method
