赤堀誠志

アカボリマサシ | Akabori Masashi

所属機関・部署：
職名：准教授
ホームページURL (1件)： http://www.jaist.ac.jp/ms/labs/yamada/index.html

研究分野 (1件)：電気電子材料工学

研究キーワード (3件)：ナノ構造 , エピタキシャル成長 , 化合物半導体

競争的資金等の研究課題 (18件)：

全件表示

論文 (102件)：

Van Thuan Pham, Md Tauhidul Islam, Soh Komatsu, Masashi Akabori. Temperature dependence of magnetic switching and spin valve behaviors in MnAs/InAs/MnAs double heterostructure on GaAs(111)B. Ceramics International. 2025
Soh Komatsu, Masashi Akabori. Enhancement of thermal stability of Zeeman-type spin-polarizer using 1DEG channel and gate-controlled resonant tunneling. Japanese Journal of Applied Physics. 2025. 64. 10. 10SP23-10SP23
MD FAYSAL KABIR, Md Tauhidul Islam, Soh Komatsu, Masashi AKABORI. Epitaxial growth and characterization of MnSb/InSb heterostructures on GaAs (111) B using molecular beam epitaxy. Japanese Journal of Applied Physics. 2025
Jannatul Ferdousy, Md Faysal Kabir, Soh Komatsu, Masashi Akabori. Effect of post-deposition annealing atmosphere on ECR-sputtered Fe₃O₄ thin films and micromagnet fabrication. Japanese Journal of Applied Physics. 2025. 64. 9. 09SP16-09SP16
Alexandro de Moraes Nogueira, Shohei Enomoto, Manoharan Muruganathan, Afsal Kareekunnan, Mohammad Razzakul Islam, Masashi Akabori, Hiroshi Mizuta. Nonlinearity and temperature dependence of CVD graphene nanoelectromechanical resonator. Japanese Journal of Applied Physics. 2024. 63. 2

MISC (26件)：

Ryota Negishi, Chaopeng Wei, Yao Yao, Yui Ogawa, Masashi Akabori, Yasushi Kanai, Kazuhiko Matsumoto, Yoshitaka Taniyasu, Yoshihiro Kobayashi. Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties. physica status solidi (b). 2020. 257. 2. 1900437-1900437
R. Horiguchi, K. Teramoto, Y. Adachi, M. Akabori, S. Hara. Aspect Ratio Dependence of Magnetization Switching in CoFe Nanolayers Patterned on GaAs (001) Substrates. Collected Abstract of the 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII), Sendai, Japan, November 27-30, 2019, WP2-20. 2019. 53-54
K. Teramoto, R. Horiguchi, Y. Adachi, M. Akabori, S. Hara. Thickness and Aspect Ratio Dependences of Magnetic Domain Structures in Patterned CoFe Thin Films on GaAs (001) Substrates. Collected Abstract of the 2019 International Conference on Solid State Devices and Materials (SSDM 2019), Nagoya, Japan, September 2-5, 2019, PS-8-20. 2019. 1-2
陳桐民, 大島義文, 赤堀誠志. STEMモアレフリンジ法によるInP/InGaAs界面歪み分布計測. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2019. 66th
CHEN T, 赤堀誠志, 大島義文. STEM Moire法によるInP/InGaAs/InP構造の歪みと組成分布の評価. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2019. 80th

講演・口頭発表等 (125件)：

Sheet Electron Density Dependence of Electron Mobility Anisotropy in In0.75Ga0.25As/InP Two-Dimensional Electron Gas
(2016 Compound Semiconductor Week, MoP-ISCS-060, Toyama, Japan, June 26-30 (2016). 2016)
Subband transport and quantum Hall effect in InGaAs/InAlAs 2DEG bilayer with surface inversion layer
(9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids, P1-24, Kobe, Japan, August 8-11 (2016). 2016)
Measurement of resonant spin Hall effect in InGaAs 2DEG bilayer system
(9th International Conference on Physics and Applications of Spin-Related Phenomena in Solids, P2-13, Kobe, Japan, August 8-11 (2016). 2016)
GaAs barrier insertion into MnAs/InAs hybrid heterostructures on GaAs(111)B for lateral spin valve device application
(第77回応用物理学会学術講演会、13p-P8-41、新潟、9/13-16 (2016). 2016)
Selective area growth of well-ordered ZnO nanowires on (111) oriented masked substrates by electrochemical method
(第77回応用物理学会学術講演会、15a-P9-6、新潟、9/13-16 (2016). 2016)

Works (1件)：

学位 (1件)：

経歴 (2件)：

1997 - 2000 日本学術振興会特別研究員DC1(1997-2000), 日本学術振興会特別研究員PD(2000-2002)
1997 - 2000 Research fellow of the Japan Society for the Promotion of Science [DC1] (1997-2000), Research fellow of the Japan Society for the Promotion of Science [PD] (2000-2002)

委員歴 (4件)：

所属学会 (7件)：

日本応用物理学会 , 日本物理学会 , Japan Applied Physics Society , The Physical Society of Japan , 電子情報通信学会 , 日本応用物理学会 , 日本物理学会

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赤堀 誠志