研究者
J-GLOBAL ID:200901024469862040   更新日: 2020年08月31日

山本 修一郎

ヤマモト シユウイチロウ | Yamamoto Shuu'ichirou
所属機関・部署:
職名: 特任講師
競争的資金等の研究課題 (2件):
  • research and development of next generation ferro-electric memory
  • 次世代強誘電体メモリの研究開発
MISC (94件):
  • Shuu'ichirou Yamamoto, Satoshi Sugahara. Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture. JAPANESE JOURNAL OF APPLIED PHYSICS. 2009. 48. 4. 043001/1-7
  • Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara. Nonvolatile SRAM architecture using MOSFET-based spin-transistors. J. Appl. Phys. 2009. 105. 07C933/1-3
  • S. Yamamoto, S. Sugahara. Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture. Jpn. J. Appl. Phys. 2009. 48. 4. 043001/1-7
  • Shuu'ichirou Yamamoto, Satoshi Sugahara. Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology. Jpn. J. Appl. Phys. 2009. 48. 4. 043001-1-7
  • Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara. Nonvolatile SRAM architecture using MOSFET-based spin-transistors. J. Appl. Phys. 2009. 105. 07C933/1-3
もっと見る
書籍 (4件):
  • ATOMIC LAYER MOCVD OF OXIDE SUPERCONDUCTORS AND DIELECTRICS
    High-Temperature Superconductors and Novel Inorganic Materials, NATO ASI Series 3 (eds. by G. Van Tendeloo, E.V. Antipov and S.N. Putilin, Kluwer Academic, Dordorecht) 1999
  • ATOMIC LAYER MOCVD OF OXIDE SUPERCONDUCTORS AND DIELECTRICS
    High-Temperature Superconductors and Novel Inorganic Materials, NATO ASI Series 3 (eds. by G. Van Tendeloo, E.V. Antipov and S.N. Putilin, Kluwer Academic, Dordorecht) 1999
  • Critical Current Density of YBCO Ultra Thin Films Prepared by Atomic Layer MOCVD
    Advances in Superconductivity VII (eds. by K.Ysmafuji and T.Morishita Springer, Tokyo) 1995
  • Critical Current Density of YBCO Ultra Thin Films Prepared by Atomic Layer MOCVD
    Advances in Superconductivity VII (eds. by K.Ysmafuji and T.Morishita Springer, Tokyo) 1995
講演・口頭発表等 (46件):
  • Variability-Tolerant CMOS Gates Using Functional MOSFETs with Resistive Switching Devices
    (Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials 2009)
  • Nonvolatile delay flip-flop using magnetic tunnel junctions with current-induced magnetization switching architecture
    (IEEE International Magnetics Conference 2009)
  • Analysis and Design of Nonvolatile SRAM Using MOSFET-Based Spin-Transistors
    (Intermag 2009 2009)
  • Nonvolatile SRAM(NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices
    (Proceedings of IEEE 2009 Custom Integrated Circuits Conference (CICC) 2009)
  • Analysis and design of nonvolatile SRAM using spintronics technology
    (Non-volatile Memory Technology Symposium 2009 (NVMTS09) 2009)
もっと見る
学歴 (3件):
  • - 1999 東京工業大学
  • - 1999 東京工業大学大学院 電子物理工学専攻
  • - 1994 東京工業大学 電子物理工学科
学位 (1件):
  • 博士(工学) (東京工業大学)
経歴 (2件):
  • 1999 - -:Tokyo Institute of Technology Research Associate
  • 1999 - -:東京工業大学 助手
所属学会 (4件):
IEEE ,  電子情報通信学会 ,  IEEE ,  応用物理学会
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