1. Coating technology using dynamic ion beam mixing 2. Epitaxial growth of SiC using organosilicon ion beam 3. Ion-surface reaction by ab initio molecular orbital method
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論文 (166件):
Satoru Yoshimura, Takae Takeuchi, Masato Kiuchi. Low-energy O+ or SiO+ ion beam induced deposition of silicon oxide using hexamethyldisiloxane. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2024. 549. 165276-165276
Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi. Deposition of germanium dioxide films by the injection of oxygen ion beam in conjunction with hexamethyldigermane. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2023. 1056. 168707-168707
Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi. Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane. Heliyon. 2023. e19002-e19002
Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Masato Kiuchi. Low-energy Ar+ ion-beam-induced chemical vapor deposition of silicon dioxide films using tetraethyl orthosilicate. Heliyon. 2023. e14643-e14643