溝川悠介

ミゾカワユウスケ | Mizokawa Yusuke

所属機関・部署：
職名：教授

研究分野 (1件)：薄膜、表面界面物性

研究キーワード (2件)：半導体表面 , Semiconductor Surface

競争的資金等の研究課題 (4件)：

MISC (112件)：

Y Kamiura, K Hasegawa, Y Sano, Y Mizokawa, K Kawamoto. Initial oxidation phenomena of heavily phosphorus-doped silicon in dry oxygen. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2002. 20. 6. 2187-2191
K Yoshida, H Sasakura, S Tsukui, T Tabata, M Adachi, R Oshima, Y Mizokawa. Preparation of metastable bi-2223 phase of Bi(2)(Ln(x)Ca(2-x))Ca(2)Cu(3)O(z) thin films (0.3 <= x <= 0.7, Ln = Pr, Nd, Sm, Eu and Gd). PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS. 2002. 377. 1-2. 101-106
K Yoshida, H Sasakura, S Tsukui, T Tabata, M Adachi, R Oshima, Y Mizokawa. Preparation of metastable bi-2223 phase of Bi(2)(Ln(x)Ca(2-x))Ca(2)Cu(3)O(z) thin films (0.3 <= x <= 0.7, Ln = Pr, Nd, Sm, Eu and Gd). PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS. 2002. 377. 1-2. 101-106
The Initial Oxidation Phenomena of Heavily Phosphorus-Doped Silicon in Dry Oxygen. J. Vac. Sci. Technol. B. 2002. in press,
K Yoshida, S Tsukui, T Tabata, M Adachi, R Oshima, Y Mizokawa. Preparation of Bi-2201 thin films Bi(2)Ln(x)Ca(2-x)Cu(1)O(z) (0.4 <= x <= 0.8, Ln = La, Pr, Nd, Sm, Eu and Gd) by laser ablation. PHYSICA C. 2001. 361. 3. 189-194

書籍 (4件)：

Behavior of Point Defects in CZ Silicon-Formation of Polyhedral Cavity and Oxidation Induced Stacking Faults Nuclei(共著)
Defects in Electronic Materials II 1996
Formation of Polyhedron Voids in CZ Silicon(共著)
Proc. 2nd Inter. Sympo on Advanced Sci. and Technol. of Silicon Materials 1996
GaAs上の酸化膜のXPS分析
1977
An XPS Analysis of the Oxide Films on GaAs
Proceedings of the Seventh International Vacuum Comgress & the 3rd International Conference on Solid Surfaces (Vienna) 1977

学歴 (4件)：

学位 (1件)：

経歴 (2件)：

委員歴 (2件)：

所属学会 (5件)：

日本真空協会 , 日本表面科学会 , 米国物理学会(The American Physical Society) , 米国真空学会(American Vacuum Society) , 応用物理学会

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溝川 悠介