Deposition of Poly-Si for TFTs by using Atomospheric pressure PCVD.
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論文 (189件):
Toshimitsu Nomura, Hiroaki Kakiuchi, Hiromasa Ohmi. High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma. Journal of Physics D: Applied Physics. 2024. 57. 27. 275204-275204
Toshimitsu Nomura, Hiroaki Kakiuchi, Hiromasa Ohmi. Role of O2 and N2 addition on low-reflectance Si surface formation using moderate-pressure (3.3 kPa) hydrogen plasma. Physica Scripta. 2023. 98. 11. 115609-115609
Toshimitsu Nomura, Hiroaki Kakiuchi, Hiromasa Ohmi. Shallow defect layer formation as Cu gettering layer of ultra-thin Si chips using moderate-pressure (3.3 kPa) hydrogen plasma. Journal of Applied Physics. 2023. 133. 16
Hiroaki Kakiuchi, Hiromasa Ohmi, Seiya Takeda, Kiyoshi Yasutake. Improvement of deposition characteristics of silicon oxide layers using argon-based atmospheric-pressure very high-frequency plasma. Journal of Applied Physics. 2022. 132. 10. 103302-103302
Toshimitsu Nomura, Kenta Kimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi. Si nanocone structure fabricated by a relatively high-pressure hydrogen plasma in the range of 3.3-27 kPa. Journal of Vacuum Science & Technology B. 2022. 40. 3. 032801-032801