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J-GLOBAL ID：200902277550549470   整理番号：07A0689593

強化歪,多孔質低k BEOLと液浸リソグラフィを使った高性能45nm SOI技術

High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

著者 (40件)： NARASIMHA S. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  ONISHI K. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  NAYFEH H. M. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  WAITE A. (IBM Systems and Technol. Group, Advanced Micro Devices Inc.) ,  WEYBRIGHT M. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  JOHNSON J. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  FONSECA C. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  CORLISS D. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  ROBINSON C. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  CROUSE M. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  YANG D. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  WU C-H. J. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  GABOR A. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  ADAM T. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  AHSAN I. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  BELYANSKY M. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  BLACK L. (IBM Systems and Technol. Group, Advanced Micro Devices Inc.) ,  BUTT S. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  CHENG J. (IBM Systems and Technol. Group, Advanced Micro Devices Inc.) ,  CHOU A. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  COSTRINI G. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  DIMITRAKOPOULOS C. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  DOMENICUCCI A. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  FISHER P. (IBM Systems and Technol. Group, Advanced Micro Devices Inc.) ,  FRYE A. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  GATES S. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  GRECO S. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  GRUNOW S. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  HARGROVE M. (IBM Systems and Technol. Group, Advanced Micro Devices Inc.) ,  HOLT J. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  JENG S-J. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  KELLING M. (IBM Systems and Technol. Group, Advanced Micro Devices Inc.) ,  KIM B. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  LANDERS W. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  LAROSA G. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  LEA D. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  LEE M. H. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  LIU X. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  LUSTIG N. (IBM Semiconductor Res. and Dev. Center (SRDC), NY) ,  MCKNIGHT A. (IBM Semiconductor Res. and Dev. Center (SRDC), NY)
資料名： Technical Digest. International Electron Devices Meeting  (Technical Digest. International Electron Devices Meeting)
巻： 2006 Vol.1  ページ： 423-426  発行年： 2006年 
JST資料番号： C0829B  ISSN： 0163-1918  資料種別： 会議録 (C)
記事区分： 原著論文  発行国： アメリカ合衆国 (USA)  言語： 英語 (EN)

抄録/ポイント： 45nm設計ルールは,65nm設計ルールの活性面積を約1/2...

シソーラス用語： *SOI構造 ,...
準シソーラス用語： BEOL ,...

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分類 (2件)： 半導体集積回路  (NC03162T) ,  固体デバイス製造技術一般  (NC03030V)

タイトルに関連する用語 (7件)： 強化 ,  歪 ,  多孔質 ,  BEOL ,  液浸リソグラフィ ,  高性能 ,  SOI技術