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J-GLOBAL ID：201302227521740697   整理番号：13A1087890

Effect of La incorporation on reliability characteristics of metal-oxide-semiconductor capacitors with hafnium based high-k dielectrics

著者 (8件)： KIM Tea Wan (School of Materials Sci. and Engineering, Inha Univ., 253 Yonghyun-dong, Nam-gu, Incheon 402-751, KOR) ,  JANG Tae-young (School of Materials Sci. and Engineering, Inha Univ., 253 Yonghyun-dong, Nam-gu, Incheon 402-751, KOR) ,  KIM Donghyup (School of Materials Sci. and Engineering, Inha Univ., 253 Yonghyun-dong, Nam-gu, Incheon 402-751, KOR) ,  KIM Jung Woo (School of Materials Sci. and Engineering, Inha Univ., 253 Yonghyun-dong, Nam-gu, Incheon 402-751, KOR) ,  JEONG Jae Kyeong (School of Materials Sci. and Engineering, Inha Univ., 253 Yonghyun-dong, Nam-gu, Incheon 402-751, KOR) ,  CHOI Rino (School of Materials Sci. and Engineering, Inha Univ., 253 Yonghyun-dong, Nam-gu, Incheon 402-751, KOR) ,  LEE Myung Soo (School of Advanced Materials Sci. and Engineering, Sungkyunkwan Univ., Suwon 440-746, KOR) ,  KIM Hyoungsub (School of Advanced Materials Sci. and Engineering, Sungkyunkwan Univ., Suwon 440-746, KOR)
資料名： Microelectronic Engineering  (Microelectronic Engineering)
巻： 89  ページ： 31-33  発行年： 2012年01月 
JST資料番号： C0406B  ISSN： 0167-9317  CODEN： MIENEF  資料種別： 逐次刊行物 (A)
発行国： オランダ (NLD)  言語： 英語 (EN)

タイトルに関連する用語 (1件)： La