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J-GLOBAL ID：201402209869361346   整理番号：14A0551163

RAF品質の150mm 4H-SiCウエハの開発

Development of RAF Quality 150mm 4H-SiC Wafer

著者 (34件)： KONDO H. (R&D Partnership for Future Power Electronics Technol.) ,  KONDO H. (DENSO CORP., Aichi, JPN) ,  TAKABA H. (R&D Partnership for Future Power Electronics Technol.) ,  TAKABA H. (DENSO CORP., Aichi, JPN) ,  YAMADA M. (R&D Partnership for Future Power Electronics Technol.) ,  YAMADA M. (DENSO CORP., Aichi, JPN) ,  URAKAMI Y. (R&D Partnership for Future Power Electronics Technol.) ,  URAKAMI Y. (DENSO CORP., Aichi, JPN) ,  OKAMOTO T. (R&D Partnership for Future Power Electronics Technol.) ,  OKAMOTO T. (DENSO CORP., Aichi, JPN) ,  KOBAYASHI M. (R&D Partnership for Future Power Electronics Technol.) ,  KOBAYASHI M. (SHOWA DENKO K.K., Shiga, JPN) ,  MASUDA T. (R&D Partnership for Future Power Electronics Technol.) ,  MASUDA T. (SHOWA DENKO K.K., Shiga, JPN) ,  GUNJISHIMA I. (R&D Partnership for Future Power Electronics Technol.) ,  GUNJISHIMA I. (TOYOTA CENTRAL R&D LABS, INC., Aichi, JPN) ,  SHIGETO K. (R&D Partnership for Future Power Electronics Technol.) ,  SHIGETO K. (TOYOTA CENTRAL R&D LABS, INC., Aichi, JPN) ,  OOYA N. (R&D Partnership for Future Power Electronics Technol.) ,  OOYA N. (DENSO CORP., Aichi, JPN) ,  SUGIYAMA N. (R&D Partnership for Future Power Electronics Technol.) ,  SUGIYAMA N. (DENSO CORP., Aichi, JPN) ,  MATSUSE A. (R&D Partnership for Future Power Electronics Technol.) ,  MATSUSE A. (SHOWA DENKO K.K., Shiga, JPN) ,  KOZAWA T. (R&D Partnership for Future Power Electronics Technol.) ,  KOZAWA T. (TOYOTA CENTRAL R&D LABS, INC., Aichi, JPN) ,  SATO T. (R&D Partnership for Future Power Electronics Technol.) ,  SATO T. (SHOWA DENKO K.K., Shiga, JPN) ,  HIROSE F. (R&D Partnership for Future Power Electronics Technol.) ,  HIROSE F. (DENSO CORP., Aichi, JPN) ,  YAMAUCHI S. (R&D Partnership for Future Power Electronics Technol.) ,  YAMAUCHI S. (DENSO CORP., Aichi, JPN) ,  ONDA S. (R&D Partnership for Future Power Electronics Technol.) ,  ONDA S. (DENSO CORP., Aichi, JPN)
資料名： Materials Science Forum  (Materials Science Forum)
巻： 778/780  号： Pt.1  ページ： 17-21  発行年： 2014年 
JST資料番号： D0716B  ISSN： 0255-5476  資料種別： 逐次刊行物 (A)
発行国： スイス (CHE)  言語： 英語 (EN)

タイトルに関連する用語 (4件)： Raf ,  4H-SiC ,  ウエハ ,  開発