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J-GLOBAL ID：201602284946866053   整理番号：13A0948275

The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics

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著者 (4件)：
Ma Fei

Ma Fei について

(School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ...)

School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ... について

, 
Liu Hongxia

Liu Hongxia について

(School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ...)

School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ... について

, 
Kuang Qianwei

Kuang Qianwei について

(School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ...)

School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ... について

, 
Fan Jibin

Fan Jibin について

(School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ...)

School of Microelectronics,Xidian Univ. Key Lab. of Ministry of Education for Wide Band-Gap Semiconductor Material ... について


資料名：
Chinese Physics B  (Chinese Physics B)

Chinese Physics B について


巻： 21  号： 5  ページ： 057305-1-057305-5  発行年： 2012年 
JST資料番号： W1539A  ISSN： 1674-1056  資料種別： 逐次刊行物 (A)
発行国： 中国 (CHN)  言語： 英語 (EN)

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