Huang Fei について
National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, China について
Wang Yan について
Key Laboratory of Microelectronics Device and Integrated Technology, Laboratory of Nanofabrication and Novel Device Integration, The Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China について
Liang Xiao について
National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, China について
Qin Jun について
National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, China について
Zhang Yan について
National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, China について
Yuan Xiufang について
National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, China について
Wang Zhuo について
National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, China について
Peng Bo について
National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, China について
Deng Longjiang について
National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, China について
Key Laboratory of Microelectronics Device and Integrated Technology, Laboratory of Nanofabrication and Novel Device Integration, The Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China について
National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, China について
Liu Ming について
Key Laboratory of Microelectronics Device and Integrated Technology, Laboratory of Nanofabrication and Novel Device Integration, The Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China について
IEEE Electron Device Letters について
誘電率 について
絶縁体 について
ドーピング について
耐放射線性 について
残留分極 について
強誘電体 について
γ線 について
FeRAM について
耐久性 について
RAM【メモリ】 について
漏れ電流 について
地金 について
γ線照射 について
金属構造 について
ヒステリシスループ について
半導体集積回路 について
トランジスタ について
放射耐性 について
強誘電体メモリ について