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J-GLOBAL ID：201702269223945235   整理番号：17A1492136

4チャネル量子カスケードレーザの外部共振器ビーム結合【Powered by NICT】

External-cavity beam combining of 4-channel quantum cascade lasers

著者 (22件)： Zhao Yue (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Zhao Yue (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China) ,  Zhang Jin-Chuan (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Zhang Jin-Chuan (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China) ,  Zhou Yu-Hong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Zhou Yu-Hong (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China) ,  Jia Zhi-Wei (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Jia Zhi-Wei (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China) ,  Zhuo Ning (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Zhuo Ning (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China) ,  Zhai Shen-Qiang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Zhai Shen-Qiang (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China) ,  Wang Li-Jun (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Wang Li-Jun (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China) ,  Liu Jun-Qi (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Liu Jun-Qi (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China) ,  Liu Shu-Man (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Liu Shu-Man (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China) ,  Liu Feng-Qi (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Liu Feng-Qi (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China) ,  Wang Zhan-Guo (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China) ,  Wang Zhan-Guo (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
資料名： Infrared Physics & Technology  (Infrared Physics & Technology)
巻： 85  ページ： 52-55  発行年： 2017年 
JST資料番号： H0184A  ISSN： 1350-4495  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： オランダ (NLD)  言語： 英語 (EN)

抄録/ポイント： 同軸伝搬する異なるQCLビームを出力結合器をもつ4チャネル量子カスケードレーザ(QCL)の外部共振器(EC)ビーム結合を実証した。35%(しきい値近くでの75%まで)のビーム結合効率は5.5のビーム品質M~2で得られた。0.64Wのピークパワーは4.7μmの波長で達成した。結合および非結合の間のスポット特性の差異も本論文で示した。このEC系におけるQCLは熱クロストークを持たないシステムは,QCLの高出力ビーム結合に使用できるようにした。Copyright 2017 Elsevier B.V., Amsterdam. All rights reserved. Translated from English into Japanese by JST.【Powered by NICT】

シソーラス用語： 波長 ,  クロストーク ,  *チャネル ,  結合器 ,  *量子カスケードレーザ
準シソーラス用語： 高出力 ,  ビーム品質 ,  *ビーム結合 ,  *外部共振器 , 【Automatic Indexing@JST】

著者キーワード (3件)： 量子カスケードレーザ ,  ビーム結合 ,  外部共振器

分類 (2件)： 半導体レーザ  (BD04070L) ,  赤外・遠赤外領域の分光法と分光計  (BD07042H)

タイトルに関連する用語 (4件)： チャネル ,  量子カスケードレーザ ,  外部共振器 ,  ビーム結合