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J-GLOBAL ID：201802264767216041   整理番号：18A1641575

ヨウ化鉛台形ナノプレートレットからの低しきい値Fabry-Perotモードレーザ発振【JST・京大機械翻訳】

Low Threshold Fabry-Perot Mode Lasing from Lead Iodide Trapezoidal Nanoplatelets

著者 (27件)： Zhong Yangguang (Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China) ,  Zhong Yangguang (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China) ,  Wei Qi (Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, China) ,  Wei Qi (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China) ,  Liu Zhen (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China) ,  Shang Qiuyu (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China) ,  Shang Qiuyu (Research Center for Wide Gap Semiconductor, Peking University, Beijing, 100871, China) ,  Zhao Liyun (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China) ,  Shao Ruiwen (Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China) ,  Zhang Zhepeng (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China) ,  Zhang Zhepeng (Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking Universi...) ,  Chen Jie (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China) ,  Chen Jie (Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China) ,  Du Wenna (Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China) ,  Shen Chao (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China) ,  Shen Chao (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Zhang Jun (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China) ,  Zhang Jun (College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Zhang Yanfeng (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China) ,  Zhang Yanfeng (Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking Universi...) ,  Gao Peng (Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China) ,  Gao Peng (International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China) ,  Gao Peng (Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China) ,  Xing Guichuan (Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao, SAR, 999078, China) ,  Liu Xinfeng (Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China) ,  Zhang Qing (Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China) ,  Zhang Qing (Research Center for Wide Gap Semiconductor, Peking University, Beijing, 100871, China)
資料名： Small  (Small)
巻： 14  号： 35  ページ： e1801938  発行年： 2018年 
JST資料番号： W2348A  ISSN： 1613-6810  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： ドイツ (DEU)  言語： 英語 (EN)

抄録/ポイント： ヨウ化鉛(PbI_2)は,緑色発光と検出装置において大きな有望性を保持する直接バンドギャップを有する層状半導体である。最近,PbI_2平面レーザは六方晶ささやき回廊モード微小共振器を用いて実証されているが,レーザ発振閾値は非常に高い。本研究では,気相堆積からのレーザ発振により,以前の値より少なくとも一桁低い閾値を持つPbI_2台形ナノ小板(NPs)を報告した。台形NPの成長機構を調べ,van der Waals相互作用と格子不整合の相乗効果に起因した。レーザ発振はn=1励起子のポピュレーション反転により可能であり,光フィードバックは台形NPの側面ファセット間のFabry-Perot振動により与えられる。この知見は,PbI_2ナノ構造の成長と光物理機構の理解を進めるだけでなく,低閾値超薄レーザを開発するためのアイデアを提供する。Copyright 2018 Wiley Publishing Japan K.K. All rights reserved. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： 反転分布 ,  ファセット ,  励起子 ,  エピタクシー ,  *レーザ ,  ナノ構造 ,  気相成長 ,  微小共振器 ,  半導体 ,  *レーザ発振 ,  六方晶系
準シソーラス用語： 囁きの回廊モード ,  直接バンドギャップ ,  *ナノプレートレット ,  *ヨウ化鉛 , 【Automatic Indexing@JST】

著者キーワード (5件)： 層状半導体 ,  マイクロキャビティ ,  PbI2 ,  小型レーザ ,  van der Waalsエピタクシー

分類 (1件)： 細胞生理一般  (EF02010S)

タイトルに関連する用語 (5件)： ヨウ化鉛 ,  台形 ,  ナノプレートレット ,  しきい値 ,  レーザ発振