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J-GLOBAL ID：202102229611015441   整理番号：21A0159347

InGaAs/InP光検出器の欠陥と暗電流の直接相関【JST・京大機械翻訳】

Direct correlation of defects and dark currents of InGaAs/InP photodetectors

著者 (28件)： Wang Hongzhen (State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Wang Hongzhen (Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Wang Hongzhen (University of Chinese Academy of Sciences, Beijing, 100049, PR China) ,  Gu Yi (State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Gu Yi (Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Gu Yi (Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, PR China) ,  Gu Yi (University of Chinese Academy of Sciences, Beijing, 100049, PR China) ,  Yu Chunlei (State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Yu Chunlei (Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Zhu Shalu (State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Zhu Shalu (Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Zhu Yicheng (State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Zhu Yicheng (University of Chinese Academy of Sciences, Beijing, 100049, PR China) ,  Chen Pingping (State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Cao Jiasheng (State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Cao Jiasheng (Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Cao Jiasheng (University of Chinese Academy of Sciences, Beijing, 100049, PR China) ,  Yang Bo (State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Yang Bo (Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Li Tao (State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Li Tao (Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Shao Xiumei (State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Shao Xiumei (Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Li Xue (State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Li Xue (Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Gong Haimei (State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Gong Haimei (Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, PR China) ,  Gong Haimei (University of Chinese Academy of Sciences, Beijing, 100049, PR China)
資料名： Materials Science in Semiconductor Processing  (Materials Science in Semiconductor Processing)
巻： 123  ページ： Null  発行年： 2021年 
JST資料番号： W1055A  ISSN： 1369-8001  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： イギリス (GBR)  言語： 英語 (EN)

抄録/ポイント： 直接相関経路をInGaAs光検出器の材料欠陥と暗電流の間で確立し,それは大規模で小さなピクセルを有する焦点面アレイを実証するのに重要である。同じ光検出器チップを,発光顕微鏡と暗電流-電圧測定を用いて特性評価した。欠陥発光を有するチップは,大きな暗電流を示すチップと完全に整合した。欠陥発光は,大きな暗電流を有するチップに対して観察され,一方,低い暗電流のチップに対してはそうではなかった。透過型電子顕微鏡の測定結果は,デバイス暗電流と相関するこれらの材料欠陥が,主に基板とInPバッファ層の界面に起因することを明らかにした。本研究は,欠陥タイプとデバイス性能の直接相関を明らかにし,光検出器材料を改善する方向を示した。Copyright 2021 Elsevier B.V., Amsterdam. All rights reserved. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： 界面 ,  発光 ,  *光検出器 ,  *暗電流 ,  画素 ,  *リン化インジウム ,  キャラクタリゼーション ,  *ヒ化ガリウムインジウム ,  透過型電子顕微鏡 ,  バッファ層 ,  電圧測定 ,  焦点面アレイ

著者キーワード (4件)： InGaAs/InP光検出器 ,  欠陥 ,  暗電流 ,  エミッション顕微鏡検査

分類 (2件)： 固体デバイス製造技術一般  (NC03030V) ,  半導体の格子欠陥  (BK12040Q)

タイトルに関連する用語 (6件)： InGaAs ,  InP ,  光検出器 ,  欠陥 ,  暗電流 ,  相関