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J-GLOBAL ID：202202274356829344   整理番号：22A0973962

真空紫外光検出のための流速変調エピタクシーによりm面サファイア上に成長させた半極性(11-22)AlN【JST・京大機械翻訳】

Semipolar (11-22) AlN Grown on m-Plane Sapphire by Flow-Rate Modulation Epitaxy for Vacuum-Ultraviolet Photodetection

著者 (31件)： Yang Jiankun (State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China) ,  Yang Jiankun (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China) ,  Yang Jiankun (Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China) ,  Gao Yaqi (State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China) ,  Gao Yaqi (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China) ,  Gao Yaqi (Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China) ,  Zheng Wei (State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, China) ,  He Rui (State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China) ,  He Rui (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China) ,  He Rui (Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China) ,  Huo Ziqiang (State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China) ,  Huo Ziqiang (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China) ,  Huo Ziqiang (Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China) ,  Ji Xiaoli (State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China) ,  Ji Xiaoli (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China) ,  Ji Xiaoli (Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China) ,  Ran Junxue (State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China) ,  Ran Junxue (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China) ,  Ran Junxue (Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China) ,  Duan Ruifei (State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China) ,  Duan Ruifei (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China) ,  Duan Ruifei (Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China) ,  Wang Junxi (State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China) ,  Wang Junxi (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China) ,  Wang Junxi (Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China) ,  Li Jinmin (State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China) ,  Li Jinmin (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China) ,  Li Jinmin (Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China) ,  Wei Tongbo (State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, China) ,  Wei Tongbo (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, China) ,  Wei Tongbo (Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, China)
資料名： Crystal Growth & Design  (Crystal Growth & Design)
巻： 22  号： 3  ページ： 1731-1737  発行年： 2022年 
JST資料番号： W1323A  ISSN： 1528-7483  CODEN： CGDEFU  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： アメリカ合衆国 (USA)  言語： 英語 (EN)

抄録/ポイント： m面サファイア上に成長した半極性(11-22)AlN膜を,流量変調エピタクシー(FME)により調べた。X線ロッキング曲線(XRC)の薄いAlN膜の半値全幅(FWHMs)は,従来の成長の1398arcsecからIII-FMEの865arcsecに減少した。欠陥密度の低下はAl移動度の延長に起因し,準三次元から二次元ステップ流への成長モードの遷移をもたらす。6μm厚さのIII-FME AlN膜に対するXRCの軸上FWHM_[11~23]と軸外FWHM_[0002]は,それぞれ346arcsecと641arcsecに減少した。成長したままの(11-22)AlN上に調製した金属-半導体-金属 AlN系光検出器は,185nm照明下で740~2.27×104の高い光対暗電流比および6~20mA/Wの応答性を有する顕著な動作特性を示し,真空紫外光検出分野における有望な応用を意味する。Copyright 2022 American Chemical Society All rights reserved. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： *エピタクシー ,  *紫外線 ,  半導体 ,  流量 ,  *アルミニウム ,  *流速 ,  暗電流 ,  二次元 ,  *サファイア ,  *窒化アルミニウム ,  ロッキングカーブ ,  三次元 ,  ステップ流 ,  FWHM ,  欠陥密度

分類 (2件)： 固-固界面  (CB12060M) ,  半導体薄膜  (BK14040E)

タイトルに関連する用語 (8件)： 光検出 ,  流速 ,  変調 ,  エピタクシー ,  サファイア ,  成長 ,  半極性 ,  AlN