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J-GLOBAL ID：200901037182632740   Update date: Sep. 28, 2024

Koshiba Shyun

コシバ シユン | Koshiba Shyun
Affiliation and department：
Kagawa University Faculty of Engineering, Material Processing Engineering

About Kagawa University Faculty of Engineering, Material Processing Engineering


Job title： Professor
Research field  (6)： Inorganic materials ,  Electric/electronic material engineering ,  Nanobioscience ,  Nanomaterials ,  Nanostructure physics ,  Nanostructure chemistry
Research keywords  (2)： 機能材料 ,  Advanced Material
Research theme for competitive and other funds  (6)：
  • 2011 - 2013 Semiconductor Materials for Infra-Red Region using Band-Gap Bowing.
  • 2006 - 2007 Development of bright THz emitter using doubly resonant one-dimensional photonic crystal in near and far infrared region
  • 2002 - 2003 Elusidation and Control of Nano Structure Self Organization Mechanisms during Epitaxial Growth
  • 2000 - 2001 Carrier dynamics in GaAs/AlAs ridge quantum wire
  • (1)化合物半導体ヘテロ構造に関する研究 (2)ナノメートルサイズの人工原子配列の制御作成,評価 (3)シンクロトロン放射光を用いた化合物半導体原子配列の解析
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Papers (19)：
  • Hayato Miyagawa, Nakaba Funaki, Shyun Koshiba, NaoshiTakahashi, Yoshihiko Inada, Masaichiro Mizumaki, Naomi Kawamura, Motohiro Suzuki. Origin of magnetization in diluted magnetic semiconductor GaGdAs monolayer and superlattice. Journal of Magnetism and Magnetic Materials. 2019. 476. 213-217
  • H. Miyagawa, N. Funaki, S. Koshiba, N. Takahashi, M. Mizumaki, M. Suzuki. Magnetic moment in diluted magnetic semiconductor GaGdAs measured by HX-MCD. 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), Toyama, 2016. 2016. 1-1
  • H. Shirai, K. Fujita, K. Ishii, S. Koshiba, S. Nakanishi, N. Tsurumachi. Transient THz absorption dynamics in Fabry-Perot microcavity structure with a semiconductor as a cavity layer. Proceedings of International Symposium on Frontiers in the THz technology, FTT2012. 2012. Pos.2.6
  • T. Kozai, S. Yamashita, K. Hirochi, H. miyagawa, N. Tsurumachi, S. Koshiba, S. Nakanishi, H. Itoh. Femotosecond coherent anti-stokes Raman beat between vibration mode in PVA film. Chemical Physics letter. 2012. 553. 26-29
  • K. Arimoto, M. Shiraga, H. Shirai, S. Takeda, M. Ohmori, H. Akiyama, T. Mochizuki, K. Yamaguchi, H. Miyagawa, N. Tsurumachi, et al. Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junctions. Transactions of the Materials Research Society of Japan. 2012. 37. 2. 193-196
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MISC (129)：
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Books (2)：
  • Fabrication of n-AlGaAs/GaAs edge quantum wires on (111)B facets with gate electrod and density modulation of one-dimensional electrons
    Nanostructures and Quantum Effects, ed.by H.Sakaki and H.Noge, (Springer-Verlag),181-188(1994.10) 1994
  • Fabrication of n-AlGaAs/GaAs edge quantum wires on (111)B facets with gate electrod and density modulation of one-dimensional electrons
    Nanostructures and Quantum Effects, ed.by H.Sakaki and H.Noge, (Springer-Verlag),181-188(1994.10) 1994
Lectures and oral presentations  (251)：
  • RF-MBE法によるSi(001)基板上へのGaN/AlN多結晶超格子の作製および評価
    (2018年 第65回 応用物理学会春季学術講演会 2018)
  • 希薄磁性半導体GaGdAs/GaAs超格子へのSiドープの効果
    (2018年 第65回 応用物理学会春季学術講演会 2018)
  • Fabrication and characterization of GaN/AlN polycrystalline superlattices grown on Si (001) substrate by RF-MBE
    (2018年 第65回 応用物理学会春季学術講演会 2018)
  • Si-doping effect on diluted magnetic semiconductro superlattice GaGdAs/GaAs
    (2018年 第65回 応用物理学会春季学術講演会 2018)
  • 希薄磁性半導体超格子GaGdAs/GaAsの磁気・電気特性に及ぼすキャリアと層厚みの影響
    (2017年度応用物理学会中国四国支部若手半導体研究会 2017)
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Education (4)：
  • - 1989 The University of Tokyo Graduate School, Division of Engineering 金属工学
  • - 1989 The University of Tokyo
  • - 1984 The University of Tokyo Faculty of Engineering 金属材料
  • - 1984 The University of Tokyo The Faculty of Engineering
Professional career (1)：
  • Doctor of Engineering (University of Tokyo)
Work history (12)：
  • 1999 - 2002 Kagawa University Faculty of Engineering
  • 1999 - 2002 Kagawa University Faculty of Engineering, Associate Professor
  • 2002 - - 香川大学 工学部, 教授
  • 2002 - - Kagawa University Faculty of Engineering, Professor
  • 1994 - 1999 科学技術振興事業団量子遷移プロジェクト, 研究員
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Committee career (9)：
  • 2016/04 - 2018/03 応用物理学会中国四国支部, 応用物理学会代議員, 応用物理学会代議員
  • 2014/04 - 2016/03 応用物理学会中国四国支部, 応用物理学会中国四国支部表彰選考委員, 応用物理学会中国四国支部表彰選考委員
  • 2013/02 - 2014/04 応用物理学会中国四国支部, 2013年度支部学術講演会(香川大学工学部(林町キャンパス),高松市), 実行委員長
  • 2013/02 - 2014/04 応用物理学会中国四国支部, 2013年度支部学術講演会(香川大学工学部(林町キャンパス),高松市), 座長
  • 2013/02 - 2014/04 応用物理学会中国四国支部, 中国四国支部・若手半導体研究会(香川県、高松市生涯学習センター まなびCANホール), 幹事
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Association Membership(s) (2)：
日本物理学会 ,  応用物理学会
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