Art

J-GLOBAL ID：201302239059481115   Reference number：13A1283113

Electroluminescence of GaNAs/GaAs MQWs p-i-n junctions grown by RF-MBE using modulated nitrogen radical beam source

変調型窒素ラジカルビーム源を用いたRF-MBEによって成長したGaNAs/GaAs MQWs p-i-n接合のエレクトロルミネセンス

Author (15)： OHTA Natsumi (Fac. of Engineering, Kagawa Univ., 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, JPN) ,  ARIMOTO Kohei (Teikoku Databank, Ltd., 2-5-20 Minami Aoyama, Minato-ku, Tokyo 107-8680, JPN) ,  SHIRAGA Masahiro (Fac. of Engineering, Kagawa Univ., 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, JPN) ,  ISHII Kenta (Fac. of Engineering, Kagawa Univ., 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, JPN) ,  INADA Masatoshi (Fac. of Engineering, Kagawa Univ., 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, JPN) ,  YANAI Shunsuke (Fac. of Engineering, Kagawa Univ., 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, JPN) ,  NAKAI Yuko (Fac. of Engineering, Kagawa Univ., 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, JPN) ,  AKIYAMA Hidefumi (Inst. for Solid State Physics, Univ. of Tokyo, 5-1-5 Kashiwa, Chiba 277-8581, JPN) ,  MOCHIZUKI Toshimitsu (Inst. for Solid State Physics, Univ. of Tokyo, 5-1-5 Kashiwa, Chiba 277-8581, JPN) ,  TAKAHASHI Toshio (Inst. for Solid State Physics, Univ. of Tokyo, 5-1-5 Kashiwa, Chiba 277-8581, JPN) ,  TAKAHASHI Naoshi (Fac. of Education, Kagawa Univ., 1-1 Saiwai-cho, Takamatsu, Kagawa 760-8521, JPN) ,  MIYAGAWA Hayato (Fac. of Engineering, Kagawa Univ., 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, JPN) ,  TSURUMACHI Noriaki (Fac. of Engineering, Kagawa Univ., 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, JPN) ,  NAKANISHI Shunsuke (Fac. of Engineering, Kagawa Univ., 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, JPN) ,  KOSHIBA Shyun (Fac. of Engineering, Kagawa Univ., 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, JPN)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 378  Page： 150-153  Publication year： Sep. 01, 2013 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *PIN junction ,  *electroluminescence ,  *MBE growth ,  *multiple quantum well ,  gallium arsenide ,  beam ,  radical ,  substrate(plate) ,  *gallium compound ,  arsenide ,  nitride ,  compound semiconductor ,  semiconductor thin film ,  photoluminescence ,  *quantum confinement
Semi thesaurus term： plasma assisted MBE ,  ラジカルビーム ,  *gallium arsenide nitride

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (8)： 変調 ,  窒素 ,  ラジカル ,  ビーム ,  RF-MBE ,  成長 ,  GaAs ,  エレクトロルミネセンス