Rchr
J-GLOBAL ID:200901068009465970   Update date: Dec. 18, 2024

Toyama Naotake

トオヤマ ナオタケ | Toyama Naotake
Affiliation and department:
Job title: Associate Professor
Research field  (2): Crystal engineering ,  Applied materials
Research keywords  (8): 結晶成長 ,  薄膜 ,  炭化シリコン ,  カーボンナノチューブ ,  Crystal growth ,  Thin film ,  Silicon carbide ,  Carbon nanotube
Research theme for competitive and other funds  (6):
  • 2003 - 2006 CVD法によるカーボンナノチューブの低温形成
  • 2003 - 2006 Growth of carbon nanotubes in low temperature by laser assisted CVD method.
  • 2001 - 2006 SiC表面分解法によるカーボンナノチューブの選択的成長制御
  • 2001 - 2006 Selective growth control of carbon nanotube films by surface decomposition of silicon carbide.
  • レーザーによるカーボンナノチューブの微細加工技術の開発
Show all
MISC (18):
Patents (1):
  • SiC単結晶簿膜の製造方法
Works (2):
  • レーザによる炭化シリコン結晶膜の形成
    1991 - 1996
  • Crystal growth of Sic thin film by laser CVD
    1991 - 1996
Education (2):
  • - 1968 Kyushu Institute of Technology
  • - 1968 Kyushu Institute of Technology Graduate School, Division of Engineering Electrical Engineering
Professional career (1):
  • Doctor of Physical Science (Kyushu University)
Work history (4):
  • 1984 - 2003 Kyushu University School of Engineering
  • 1969 - 1984 Kyushu University School of Engineering
  • 1969 - 1984 Research Associate, Faculty of Engineering,
  • Kyushu Institute of Technology
Association Membership(s) (2):
応用物理学会 ,  The Japan Society of Applied Physics
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page