Hijikata Yasuto

ヒジカタヤスト | Hijikata Yasuto

Research field (5)： Electronic devices and equipment , Electric/electronic material engineering , Optical engineering and photonics , Crystal engineering , Applied materials

Research theme for competitive and other funds (13)：

2022 - 2025 Generation of arbitrary polarized single-photons by injection of spin electric current to a silicon carbide MOS device
2021 - 2024 Elucidation of SiC-MOS interfaces by developing electronic structure calculation methods
2018 - 2021 Multi-scale calculations for complex correlation appearing in SiC oxidation and its impact on electronic properties
2017 - 2020 Quantum state measurements of single photon sources in silicon carbide devices
2015 - 2019 Development of an extreme environment resistive CCD using silicon carbide

Show all

Papers (106)：

Yamazaki, Y., Chiba, Y., Sato, S.-I., Makino, T., Yamada, N., Satoh, T., Kojima, K., Hijikata, Y., Tsuchida, H., Hoshino, N., et al. Optically detected magnetic resonance study of 3d arrayed silicon vacancies in sic pn diodes. Materials Science Forum. 2020. 1004 MSF
Chiba, Y., Yamazaki, Y., Makino, T., Sato, S.-I., Yamada, N., Satoh, T., Kojima, K., Lee, S.-Y., Hijikata, Y., Ohshima, T. Creation of color centers in sic pn diodes using proton beam writing. Materials Science Forum. 2019. 963 MSF
Hijikata, Y. Macroscopic simulations of the SiC thermal oxidation process based on the Si and C emission model. Diamond and Related Materials. 2019. 92. 253-258
Matsushita, Y.-I., Furukawa, Y., Hijikata, Y., Ohshima, T. First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure. Applied Surface Science. 2019. 464. 451-454
Takeyama, A., Makino, T., Okubo, S., Tanaka, Y., Yoshie, T., Hijikata, Y., Ohshima, T. Radiation response of negative gate biased SiC MOSFETs. Materials. 2019. 12. 7. 2741-2741

ｍore...

MISC (23)：

本多智也, 本多智也, Kraus HANNES, Kraus HANNES, 加田渉, 小野田忍, 春山盛善, 春山盛善, 佐藤隆博, 江夏昌志, et al. プロトンマイクロビーム照射によるSiC中の発光中心の形成. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2016. 63rd
Sadafumi Yoshida, Yasuto Hijikata, Hiroyuki Yaguchi. Investigation of SiC/Oxide Interface Structures by Spectroscopic Ellipsometry. Advanced Silicon Carbide Devices and Processing. 2015
徳田英俊, 折原操, 八木修平, 土方泰斗, 矢口裕之. InN/GaNドット多重積層構造に向けたGaNキャップ層成長条件の検討. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2013. 74th. 8. ROMBUNNO.17P-P7-15-08JL06-4
HIJIKATA Yasuto, YAGI Shuhei, YAGUCHI Hiroyuki. An attempt for clarification of SiC oxidation mechanism : Common/different point to Si oxidation. Technical report of IEICE. SDM. 2013. 113. 87. 91-96
土方泰斗, 矢口裕之, 吉田貞史. Theoretical studies for Si and C emission into SiC layer during oxidation. 埼玉大学工学部紀要第一部論文集. 2010. 44. 34-37

ｍore...

Books (1)：

テラヘルツ反射分光法による炭化珪素半導体の電気的特性の非破壊マッピング測定
[土方泰斗] 2007

Education (1)：

1996 - 1999 Tokyo Institute of Technology Interdisciplinary Graduate School of Science and Engineering

Work history (3)：

2006/04 - 現在 Saitama University Graduate School of Science and Engineering Associate Professor
2005/09 - 2006/03 CNR IMM Guest Researcher
1999/10 - 2006/03 Saitama University Faculty of Engineering Assistant Professor

Committee career (2)：

2019/01 - 現在 Japan Society of Applied Physics Representative
2010/04 - 現在 Japan Society of Applied Physics, Advanced Power Semiconductors Division Member

Awards (1)：

2019/03 - Japan Society of Applied Physics 13th Poster Award Structural Identification of the Single-Photon Sources Formed on SiC Surface using Isotope Oxygen

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page