Rchr
J-GLOBAL ID：200901087615110163   Update date: Jan. 31, 2024

Sugimoto Satoshi

Sugimoto Satoshi
Affiliation and department：
Osaka University Graduate School of Engineering Center for Atomic and Molecular Technologies

About Osaka University Graduate School of Engineering Center for Atomic and Molecular Technologies


Job title： Associate Professor
Other affiliations (3)：
  • Osaka University  Graduate School of Engineering Center for Atomic and Molecular Technologies   Associate Professor
  • Osaka University  Graduate School of Engineering, Frontier Research Center, Graduate School of Engineering Center for Atomic and Molecular Technologies 
  • Osaka University  Graduate School of Engineering, Frontier Research Center, Graduate School of Engineering Center for Atomic and Molecular Technologies 
Research field  (3)： Nanobioscience ,  Nanomaterials ,  Basic plasma science
Research keywords  (4)： プラズマ応用 ,  プラズマ計測 ,  Plasma Application ,  Plasma Measurement
Research theme for competitive and other funds  (21)：
  • 2010 - 2012 Development of a high energy efficient process in a plasma-catalyst reaction field for a hydrogen production without carbon dioxide emission
  • 2002 - 2003 Current drive and its spatial diffusion of high-beta plasma by the application of RF rotating magnetic field
  • 2001 - 2002 Improvement of Organosilicon Ion Beam Technology and Application to SiC Heteroepitaxy
  • 2000 - 2002 Magnetic compression heating of extremely high beta plasma configuration
  • 1999 - 2001 Investigation of behavior of scrape-off plasma flow in ultra-high beta configuration
Show all
Papers (118)：
  • Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi. Silicon oxide film formation by spraying tetraethyl orthosilicate onto substrate with simultaneous low-energy SiO+ ion-beam irradiation. AIP Advances. 2023. 13. 11
  • Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi. Deposition of germanium dioxide films by the injection of oxygen ion beam in conjunction with hexamethyldigermane. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2023. 1056. 168707-168707
  • Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi. Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane. Heliyon. 2023. e19002-e19002
  • Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Masato Kiuchi. Low-energy Ar+ ion-beam-induced chemical vapor deposition of silicon dioxide films using tetraethyl orthosilicate. Heliyon. 2023. e14643-e14643
  • Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Kensuke Murai, Masato Kiuchi. Injection of low-energy SiCH5+ ion-beam to Si substrate during chemical vapor deposition process using methylsilane. AIP Advances. 2022. 12. 11. 115104-115104
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MISC (64)：
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Works (1)：
  • インバータープラズマを用いた高密度記録材料の開発技術の研究
    2001 -
Education (2)：
  • - 1986 Osaka University Graduate School, Division of Engineering
  • - 1986 Osaka University
Professional career (1)：
  • (BLANK)
Awards (1)：
  • 1989 - 高温学会学術奨励賞
Association Membership(s) (5)：
電子情報通信学会 ,  日本物理学会 ,  高温学会 ,  プラズマ・核融合学会 ,  応用物理学会
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