Rchr
J-GLOBAL ID:200901099738229678
Update date: May. 09, 2020
Hasegawa Fumio
ハセガワ フミオ | Hasegawa Fumio
Affiliation and department:
Job title:
Professor,University of Tsukuba Professor Emeritus
Research field (4):
Electronic devices and equipment
, Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research theme for competitive and other funds (2):
- 2004 - 2007 窒化物半導体の結晶成長と電子デバイス、光デバイスへの応用
- 2004 - 2007 Epitaxial growth of nitride semiconductors and its application to elecronic and photonic devices
MISC (48):
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K Yamaguchi, H Tomioka, T Yui, T Suemasu, K Ando, R Yoshizaki, F Hasegawa. Magneto-optical studies of ferromagnetic Cr-doped GaN films grown by molecular beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 9A. 6510-6512
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K Yamaguchi, H Tomioka, T Yui, T Suemasu, K Ando, R Yoshizaki, F Hasegawa. Magneto-optical studies of ferromagnetic Cr-doped GaN films grown by molecular beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 9A. 6510-6512
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T Sunohara, C Li, Y Ozawa, T Suemasu, F Hasegawa. Growth and characterization of Si-based light-emitting diode with beta-FeSi2-particles/Si multilayered active region by molecular beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 6A. 3951-3953
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T Sunohara, C Li, Y Ozawa, T Suemasu, F Hasegawa. Growth and characterization of Si-based light-emitting diode with beta-FeSi2-particles/Si multilayered active region by molecular beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 6A. 3951-3953
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M Takauji, C Li, T Suemasu, F Hasegawa. Fabrication of p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diode by molecular beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 4B. 2483-2486
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Books (6):
-
半導体デバイス
産業図書(株) 1987
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Semiconductor Devices
1987
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ガリウムヒ素
丸善(株) 1986
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Gallium Arsenide
1986
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GaAs FET Principle and Technology: Chapter 3; Low Noise GaAs FET, Chapter 4; Power GaAs FET
Artech House, Inc. Edited by J.D.DiLorenzo 1982
more...
Professional career (1):
- Doctor of Engineering (Tohoku University)
Work history (20):
- 1999 - 2004 University of Tsukuba Institute of Applied Physics
- 1999 - 2004 Professor, Institute of Applied Physics, University of Tsukuba
- 2004 - - 工学院大学 工学部 電子工学科 特別専任教授
- 2004 - - Professor, Dept. Electronics Engineering, Kogakuin University
- 1988 - 1999 University of Tsukuba Institute of Materials Science
- 1988 - 1999 Professor, Institute of Materials Science, University of Tsukuba
- 1981 - 1988 University of Tsukuba Institute of Materials Science
- 1981 - 1988 Associated Professor, Institute of Materials Science, University of Tsukuba
- 1980 - 1981 日本電気(株)半導体事業部 技術課長
- 1980 - 1981 Technical Manager, Semiconductor Division, Nippon Electric Company Ltd.
- 1978 - 1980 日本電気(株)中央研究所電子デバイス研究部研究課長
- 1978 - 1980 Research Manager, Electron Device Laboratory, CRL, Nippon Electric Company Ltd.
- 1977 - 1978 日本電気(株)中央研究所電子デバイス研究部研究スペシャリスト
- 1977 - 1978 Research Speciallist, Electron Device Laboratory, CRL, Nippon Electric Company Ltd.
- 1971 - 1977 日本電気(株)中央研究所電子デバイス研究部研究主任
- 1971 - 1977 Research Supervisor, Electron Device Laboratory, CRL, Nippon Electric Company Ltd.
- 1973 - 1975 英国Sheffield大学電子電気工学科senior research fellow
- 1973 - 1975 Senior Research Fellow, Dept. Elecronic and Electronics Engineering, Univ. of Sheffield. England
- 1965 - 1971 日本電気(株)中央研究所研究員
- 1965 - 1971 Reseach Stuff, Central Research Laboratories, Nippon Electric Company Ltd.
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